During operation, no voltage is applied between the gate and source. Unlike enhanced MOS transistors, there is a conductive channel between the drain and source. Therefore, as long as a forward voltage is applied between the drain and source, a drain current will be generated.
Categories：Product knowledge Date：2024-11-14 Hits：375 View »
When there is no voltage applied between the gate and source during operation, the PN junction between the drain and source is reversed, so there is no conductive channel. Even if a voltage is applied between the drain and source, the conductive channel is closed and no current flows through.
Categories：Product knowledge Date：2024-11-14 Hits：360 View »
When conducting, the driving circuit should be able to provide sufficient charging current to quickly raise the voltage between the MOSFET gate and source to the required value, ensuring that the switch tube can be quickly turned on and there is no high-frequency oscillation of the rising edge.
Categories：Product knowledge Date：2024-11-14 Hits：386 View »
This type of suppressor has the characteristic of "electric pry" and is usually related to 4-layer NPNP silicon controlled bipolar devices or plasma gas/GDT devices.
Categories：Product knowledge Date：2024-11-14 Hits：356 View »
Usually, the diodes used by most people are made of silicon as the raw material, but the recently popular silicon carbide diodes are those made of silicon carbide as the raw material.
Categories：Product knowledge Date：2024-11-14 Hits：464 View »
Usually, the diodes used by most people are made of silicon as the raw material, but the recently popular silicon carbide diodes are those made of silicon carbide as the raw material.
Categories：Product knowledge Date：2024-11-14 Hits：364 View »
Schottky diode is a type of diode that utilizes Schottky barrier technology, compared to ordinary PN junction diodes.
Categories：Product knowledge Date：2024-11-14 Hits：361 View »
This type of suppressor has the characteristic of "electric pry" and is usually related to 4-layer NPNP silicon controlled bipolar devices or plasma gas/GDT devices.
Categories：Product knowledge Date：2024-11-14 Hits：361 View »
MUR2060PT TO-247 YuFeng Microelectronics, original manufacturer of diodes, high-voltage diodes, surface mount diodes, fast recovery diodes, Schottky diodes, low voltage drop Schottky diodes, field-effect transistors, MOSFETs, MOSFET manufacturers, MOSFET production, fast recovery bridge stack, inverter rectifier bridge, rectifier bridge, ESD electrostatic tube, TSS solid-state discharge tube, TVS diode - YuFeng Microelectronics
Categories：Product Subsitution Date：2024-11-13 Hits：355 View »
BT151-800 TO-220B YuFeng Microelectronics, original manufacturer of diodes, high-voltage diodes, surface mount diodes, fast recovery diodes, Schottky diodes, low voltage drop Schottky diodes, field-effect transistors, MOSFETs, MOSFET manufacturers, MOSFET production, fast recovery bridge stack, inverter rectifier bridge, rectifier bridge, ESD electrostatic tube, TSS solid-state discharge tube, TVS diode - YuFeng Microelectronics
Categories：Product Subsitution Date：2024-11-13 Hits：328 View »
